Abstract: In this study, porous silicon (PS) and aluminum (Al) doped porous silicon were synthesized through an electrochemical
method, utilizing carefully selected parameters. The etching procedure was calibrated with a 4:1
HF/ethanol ratio, maintaining a current of 20 mA for 20 min, and incorporating 0.05 g of doping powder.
Comprehensive structural analysis using FESEM-EDX revealed the incorporation of Al into the porous silicon
matrix. Subsequently, the samples were covered with a finger mask, which facilitated the creation of an interdigitated
electrode using a sputtering deposition method. The I–V characteristics of the samples were systematically
studied, showing an increase in bias voltage at the source correlated with the measured current.
Remarkably, upon X-ray exposure, pulses were successfully measured, highlighting the potential of these materials
for radiation detection. These pulses were evaluated under various X-ray irradiation parameters using a
sample detector. The study successfully identified the optimal parameters for PS and Al-PS as (90 V, 100 mA, 1 s)
and (100 V, 10 mA, 0.5 s), respectively. This research underscores the potential applications of these materials in
advanced electronic devices and sensors. The unique properties of synthesized porous silicon, particularly when
doped with aluminum, could be beneficial in areas such as photovoltaics, biosensors, and photonics. Additionally,
the material’s efficiency in detecting X-ray radiation suggests its suitability for medical imaging, security
scanning, and radiation monitoring systems. Based on the I–V characteristic studies, these materials may be wellsuited
for use in electronic components requiring precise control of electrical properties. Overall, this study not
only enhances our understanding of porous silicon and aluminum-doped porous silicon but also opens up new
avenues for their application in a wide range of sensing technologies.